Brand: Oxford Instruments | Category: Nanotechnology
The PlasmaPro 100 ICPCVD uses a high density remote plasma to grow dielectric films at low temperature with little substrate damage. Typical materials include silicon dioxide, silicon nitride, silicon oxynitride, silicon and silicon carbide on wafers up to 200 mm.
| Parameter | Value |
|---|---|
| Substrate temperature | as low as 5 °C |
| Electrode temperature range | 5 °C to 400 °C |
| ICP source sizes | 65 mm, 180 mm, 300 mm |
| Specification | Compatible with wafer sizes up to 200 mm |
| Typical process pressure | 1 to 10 mTorr |
| Plasma density | greater than 10^11 cm-3 |
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The PlasmaPro 100 Nano, formerly Nanofab, is a high temperature CVD and PECVD system for growing 1D and 2D nanomaterials and heterostructures. A cold wall chamber with showerhead delivery supports graphene, hBN, transition metal dichalcogenide and nanotube growth.
The PlasmaPro 100 PECVD deposits dielectric and silicon based films with control of refractive index, stress, electrical properties and wet chemical etch rate. Dual frequency power applied to the showerhead electrode allows stress control and film densification.
Ionfab systems perform ion beam etching, milling and ion beam deposition in a single chamber, with beam energy and ion flux controlled independently. Platen tilt sets the sidewall profile, and handling options run from open load to cassette to cassette.