Brand: Oxford Instruments | Category: Nanotechnology
The PlasmaPro 100 ICPCVD uses a high density remote plasma to grow dielectric films at low temperature with little substrate damage. Typical materials include silicon dioxide, silicon nitride, silicon oxynitride, silicon and silicon carbide on wafers up to 200 mm.
| Parameter | Value |
|---|---|
| Substrate temperature | as low as 5 °C |
| Electrode temperature range | 5 °C to 400 °C |
| ICP source sizes | 65 mm, 180 mm, 300 mm |
| Specification | Compatible with wafer sizes up to 200 mm |
| Typical process pressure | 1 to 10 mTorr |
| Plasma density | greater than 10^11 cm-3 |
Contact Vvon Technologies Limited, Bangladesh's authorised distributor for Oxford Instruments.
Phone: +880 1711-738207 | Email: info@vvon.com.bd